dr. ha minh tan

  • Lecturer
  • Engineer and Master degree at HUST, Vietnam
  • PhD degree at Gyeongsang National University, Korea
  • Postdoc at KICET, Korea

E-mail: tan.haminh@hust.edu.vn

RESEARCH INTEREST

  • Single crystal growth
  • Semiconductor thin film fabrication
  • Numerical simulation of engineering processes
  • Modeling and Machine Learning

TEACHING COURSES

  1. Materials Processes
  2. Numerical simulation for casting process
  3. Solidification process
  4. Alloying design
  5. Materials design
  6. Nanostructured materials
  7. Data analysis and experiment design

CURRENT PROJECTS

PUBLISHED PAPERS

  1. Hà Minh Tân, S.-M. Jeong, A review of the simulation studies on the bulk growth of silicon carbide single crystals. J. Korean Ceram. Soc. 59, 153–179 (2022). [DOI: 10.1007/s43207-022-00188-y].
  2. -Y. Park, Hà Minh Tân, K.-H. Kim, L. Van Lich, Y.-J. Shin, S.-M. Jeong, S.-H. Kwon, S.-Y. Bae, Enhanced thickness uniformity of large-scale α-Ga2O3 epilayers grown by vertical hot-wall mist chemical vapor deposition. Ceram. Int. S0272884221034532 (2021). [DOI: 10.1016/j.ceramint.2021.11.045].
  3. -H. Kim, Hà Minh Tân, H. Lee, M. Kim, O. Nam, Y.-J. Shin, S.-M. Jeong, S.-Y. Bae, Microstructural Gradational Properties of Sn-Doped Gallium Oxide Heteroepitaxial Layers Grown Using Mist Chemical Vapor Deposition. Materials 15, 1050 (2022). [DOI: 10.3390/ma15031050].
  4. Van Lich, M.-T. Le, N.-L. Vu, H.-D. Nguyen, V.-T. Le, Hà Minh Tân, T.-G. Nguyen, V.-H. Dinh, Direct switching of polarization vortex in triangular ferroelectric nanodots: Role of crystal orientation. Phys. Rev. B 104, 024104 (2021). [DOI: 10.1103/PhysRevB.104.024104].
  5. Hà Minh Tân, K. Kim, Y. Shin, S. Jeong, S. Bae, Leidenfrost Motion of Water Microdroplets on Surface Substrate: Epitaxy of Gallium Oxide via Mist Chemical Vapor Deposition. Adv. Mater. Interfaces 8, 2001895 (2021). [DOI: 10.1002/admi.202001895].
  6. Van Lich, N.-L. Vu, Hà Minh Tân, T.Q. Bui, V.-T. Le, T.-G. Nguyen, V.-H. Dinh, Enhancement of electrocaloric effect in compositionally graded ferroelectric nanowires. J. Appl. Phys. 127, 214103 (2020). [DOI: 10.1063/1.5145040].
  7. Hà Minh Tân, L.V. Lich, Y.-J. Shin, S.-Y. Bae, M.-H. Lee, S.-M. Jeong, Improvement of SiC Crystal Growth Rate and Uniformity via Top-Seeded Solution Growth under External Static Magnetic Field: A Numerical Investigation. Materials 13, 651 (2020). [DOI: 10.3390/ma13030651].
  8. Hà Minh Tân, K.-H. Kim, Y.-J. Kwon, C.-J. Kim, S.-M. Jeong, S.-Y. Bae, Understanding Thickness Uniformity of Ga2O3 Thin Films Grown by Mist Chemical Vapor Deposition. ECS J. Solid State Sci. Technol. 8, Q3206–Q3212 (2019). [DOI: 10.1149/2.0381907jss].
  9. -H. Kim, Hà Minh Tân, Y.-J. Kwon, H. Lee, S.-M. Jeong, S.-Y. Bae, Growth of 2-Inch α-Ga2O3 Epilayers via Rear-Flow-Controlled Mist Chemical Vapor Deposition. ECS J. Solid State Sci. Technol. 8, Q3165–Q3170 (2019). [DOI: 10.1149/2.0301907jss].
  10. -Y. Park, Y.-J. Shin, Hà Minh Tân, S.-Y. Bae, Y.-S. Lim, S.-M. Jeong, Effect of Radiation Heat Transfer on the Control of Temperature Gradient in the Induction Heating Furnace for Growing Single Crystals. J. Korean Inst. Electr. Electron. Mater. Eng. 32, 522–527 (2019). [DOI: 10.4313/JKEM.2019.32.6.522].
  11. Hà Minh Tân, Y.-J. Shin, S.-Y. Bae, Y.-J. Yoo, S.-M. Jeong, Effect of Residual Droplet on the Solution-Grown SiC Single Crystals. J. Korean Inst. Electr. Electron. Mater. Eng. 32, 516–521 (2019). [DOI: 10.4313/JKEM.2019.32.6.516].
  12. Hà Minh Tân, Y.-J. Shin, S.-Y. Bae, S.-Y. Park, S.-M. Jeong, Effect of Hot-zone Aperture on the Growth Behavior of SiC Single Crystal Produced via Top-seeded Solution Growth Method. J. Korean Ceram. Soc. 56, 589–595 (2019). [DOI: 10.4191/kcers.2019.56.6.07].
  13. Hà Minh Tân, Y.-J. Yu, Y.-J. Shin, S.-Y. Bae, M.-H. Lee, C.-J. Kim, S.-M. Jeong, Flow modification enhancing the growth rate in top seeded solution growth of SiC crystals. RSC Adv. 9, 26327–26337 (2019). [DOI: 10.1039/C9RA04930D].
  14. Hà Minh Tân, Y.-J. Shin, M.-H. Lee, C.-J. Kim, S.-M. Jeong, Effects of the Temperature Gradient Near the Crystal-Melt Interface in Top Seeded Solution Growth of SiC Crystal. Phys. Status Solidi A 215, 1701017 (2018). [DOI: 10.1002/pssa.201701017].
  15. Hà Minh Tân, C. Manh Hung, T.M. Ngoc, H. Nguyen, N. Duc Hoa, N. Van Duy, N.V. Hieu, Novel Self-Heated Gas Sensors Using on-Chip Networked Nanowires with Ultralow Power Consumption. ACS Appl. Mater. Interfaces 9, 6153–6162 (2017). [DOI: 10.1021/acsami.6b14516].
  16. E. Lee, B.G. Kim, J.-Y. Yoon, Hà Minh Tân, M.-H. Lee, Y. Kim, W.-S. Seo, H.-J. Choi, W.-J. Lee, S.-M. Jeong, The role of an SiC interlayer at a graphite–silicon liquid interface in the solution growth of SiC crystals. Ceram. Int. 42, 11611–11618 (2016). [DOI: 10.1016/j.ceramint.2016.04.060].
  17. T.T. Le, N. Van Duy, Hà Minh Tân, D.D. Trung, N.N. Trung, P.T.H. Van, N.D. Hoa, N. Van Hieu, Density-controllable growth of SnO2 nanowire junction-bridging across electrode for low-temperature NO2 gas detection. J. Mater. Sci. 48, 7253–7259 (2013). [DOI: 10.1007/s10853-013-7545-9].
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